Agilent Technologies B2201A Manual de Serviço descarregar pdf (Página 111)

Module 13

SPGU Control and Applications

13-25

Gate

Drain

Source

Sub

SPGU

SPGU output

NOR Cell Test

Pulse switch for drain open

3-level pulse by each channel

40V

-40V

Write pulse

Erase pulse

• Drain open can be made by

opening the analog switch in

the HVSPGU.

Flash Memory – Endurance Test

Gate

Drain

Source

Sub

12V

Write pulses

Erase pulse

Open

NAND Cell Test

• Burst write/erase reduces

test time dramatically

In an example, the test time was less

than 2 hours for 1 million cycle test.

It will be about 1/70 compared with

4155/4156 solution.

For 1 million cycle test, 2PG solution

improves the test time about 1/4

compared with 4155/4156 solution.

3PG solution improves it about 1/4

compared with 2PG solution.

Note:

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Agilent Technologies B2201A Manual de Serviço Página 111